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1.8V drive P-channel MOSFET with low on-resistance for power management switching
VDSS -20V | VGSS +/-10V | ID -6A | IDP -20A | RDS(ON) 25.3 mOhm max at -4.5V
10 pcs/pack
滿千免運優惠(限郵寄和超商純取貨) on order
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| 商品簡介 |
| 商品規格 |
| Characteristics | Symbol | Rating |
| Drain-source voltage | VDSS | -20V |
| Gate-source voltage | VGSS | ±10V |
| Drain current | ID | -6A |
| Drain current (pulsed) | IDP | -20A |
| Power dissipation | PD | 1W |
| Power dissipation | 2W | |
| Channel temperature | Tch | 150°C |
| Storage temperature | Tstg | -55~150 °C |
| 文件下載 |
| 出貨清單 |