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Fifth generation HEXFET P-channel MOSFET for load switching and power modules
DPAK (TO-252) | Vds 55V | Id 31A | Rds(on) 65mOhm | Qg 42nC | Pd 110W
Operating temperature -55 to +175C, lead-free and RoHS compliant
滿千免運優惠(限郵寄和超商純取貨) on order
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IRFR5305TR TO-252 P 通道功率型 MOSFET 採用第五代 HEXFET® 技術,以先進製程實現極低導通阻抗與高速切換特性,並具備堅固耐用的結構設計,確保在高效率電源與開關電路中長期穩定運作。
此元件採用 DPAK(TO-252)表面黏著封裝,適用於紅外線回流焊、波峰焊或氣相焊接等 SMT 製程,具有良好的散熱能力與可靠性。在典型應用中,功率耗散可達 1.5W。
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