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價格均含稅，下單享優惠！歡迎大量採購，由專人提供專案報價。

目前僅提供網路賣場服務，無實體店面，無自取服務。

價格均含稅，下單享優惠！歡迎大量採購，由專人提供專案報價。

View All / IC|Passive parts / Discrete Semiconductors / Transistors
2個-2SD667L-C DIP UTC電晶體

2個-2SD667L-C DIP UTC電晶體

產品貨號：368010500480
區號：Ma10-31
品牌：
原廠貨號：

滿千免運優惠(限郵寄和超商純取貨) on order

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NT$11
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Description

商品規格

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 120 V
Collector to Emitter Voltage VCEO 80 V
Emitter to Base Voltage VEBO 6 V
Collector Curren IC 1.0 A
Collector Peak Current (Note2) ICP 2.0 A
Collector Power Dissipation PC 0.9 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55°C ~ +150°C °C

Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10ms, Duty cycle≤20%.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Base Breakdown Voltage BVCBO IC=10μA, IE=0 120     V
Collector to Emitter Breakdown Voltage 2BVCEO IC=1mA, RBE=∞ 80     V
Emitter to Base Breakdown Voltage BVEBO IE=10μA, IC=0 6     V
Collector Cutoff Current ICBO VCB=120V, IE=0     500 nA
Emitter Cutoff Current IEBO VEB=6V, IC=0     500 nA
DC Current Transfer Ratio hFE1 VCE=5V, IC=150mA 60   320  
hFE2 VCE=5V, IC=500mA 40      
Collector to Emitter Saturation Voltage VCE(SAT) IC=500mA, IB=50mA     0.5 V
Base to Emitter Saturation Voltage VBE(SAT) IC=500mA, IB=50mA     1.1 V
Gain Bandwidth Product fT VCE= -5V, IC= -150mA   140   MHz
Collector Output Capacitance Cob VCB= -10V, IE=0, f=1MHz   20   pF

CLASSIFICATION OF hFE1

RANK B C D
RANGE 60-120 100-200 160-320

下載文件

Datasheet


出貨清單
  • 2個-2SD667L-C DIP UTC電晶體 x 1
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