6N139

DESCRIPTION

High common mode transient immunity and very high currentratio together with 5300 VRMS insulation are achieved bycoupling and LED with an integrated high gain photo detectorin an eight pin dual-in-line package. Separate pins for thephoto diode and output stage enable TTL compatiblesaturation voltages with high speed operation.

Photo darlington operation is achieved by tying the VCC andVO terminals together. Access to the base terminal allowsadjustment to the gain bandwidth.

The 6N138 is ideal for TTL applications since the 300 %minimum current transfer ratio with an LED current of 1.6 mAenables operation with one unit  load-in and one unit load-outwith a 2.2 kΩ pull-up resistor.

The 6N139 is best suited for low power logic applicationsinvolving CMOS and low power TTL. A 400 % currenttransfer ratio with only 0.5 mA of LED current is guaranteedfrom 0 °C to 70 °C.

Caution: Due to the small geometries of this device, it should behandled with Electrostatic Discharge (ESD) precautions. Propergrounding would prevent damage further and/or degradation whichmay be induced by ESD.

FEATURES

•High current transfer ratio, 300 %
•Low input current, 0.5 mA
•High output current, 60 mA
•Isolation test voltage, 5300 VRMS
•TTL compatible output, VOL = 0.1 V
•High common mode rejection, 500 V/µs
•Adjustable bandwidth-access to base
•Standard molded dip plastic package
•Lead (Pb)-free component
•Component in accordance to RoHS 2002/95/EC andWEEE 2002/96/EC

APPLICATIONS

•Logic ground isolation-TTL/TTL, TTL/CMOS,CMOS/CMOS, CMOS/TTL
•EIA RS 232 line receiver
•Low input current line receiver-long lines, party lines
•Telephone ring detector
•117 VAC line voltage status indication-low input powerdissipation
•Low power systems-ground isolation

datasheet