Name: 2個-2SD667L-C DIP UTC電晶體
SKU: 64e1cb8807401300013ee7f5
Price: 11.0 TWD
Availability: InStock

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2個-2SD667L-C DIP UTC電晶體

產品貨號：368010500480
區號：Ma10-31
品牌：
原廠貨號：

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NT$11

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ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER	SYMBOL	RATINGS	UNIT
Collector to Base Voltage	VCBO	120	V
Collector to Emitter Voltage	VCEO	80	V
Emitter to Base Voltage	VEBO	6	V
Collector Curren	IC	1.0	A
Collector Peak Current (Note2)	ICP	2.0	A
Collector Power Dissipation	PC	0.9	W
Junction Temperature	TJ	+150	°C
Storage Temperature	TSTG	-55°C ~ +150°C	°C

Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10ms, Duty cycle≤20%.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNIT
Collector to Base Breakdown Voltage	BVCBO	IC=10μA, IE=0	120			V
Collector to Emitter Breakdown Voltage	2BVCEO	IC=1mA, RBE=∞	80			V
Emitter to Base Breakdown Voltage	BVEBO	IE=10μA, IC=0	6			V
Collector Cutoff Current	ICBO	VCB=120V, IE=0			500	nA
Emitter Cutoff Current	IEBO	VEB=6V, IC=0			500	nA
DC Current Transfer Ratio	hFE1	VCE=5V, IC=150mA	60		320
DC Current Transfer Ratio	hFE2	VCE=5V, IC=500mA	40
Collector to Emitter Saturation Voltage	VCE(SAT)	IC=500mA, IB=50mA			0.5	V
Base to Emitter Saturation Voltage	VBE(SAT)	IC=500mA, IB=50mA			1.1	V
Gain Bandwidth Product	fT	VCE= -5V, IC= -150mA		140		MHz
Collector Output Capacitance	Cob	VCB= -10V, IE=0, f=1MHz		20		pF

CLASSIFICATION OF hFE1

RANK	B	C	D
RANGE	60-120	100-200	160-320

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2個-2SD667L-C DIP UTC電晶體 x 1

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2個-2SD667L-C DIP UTC電晶體

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